Inter-Valence-Band Absorption in Electron-Hole Droplets.

Inter-valence-band hole-hole scattering in cubic semiconductors

Transitions between valence subbands resulting from hole-hole scattering in cubic semiconductors have been analyzed in the frame of Coulomb interaction of valence electrons in the Luttinger-Kohn representation. Expressions for transition rates are derived. Calculated rates for transitions between lightand heavy-hole bands are presented for germanium. Hole-hole scattering has remarkably differen...

Inter-Valence-Band Hot Hole Laser in Two-Dimensional Delta-Doped Homoepitaxial Semiconductor Structures

This paper reviews, compares, and contrasts recent gain calculations for a laser concept in deltadoped p-Ge and p-GaAs. Gain is calculated using distribution functions, determined from Monte Carlo simulations, for hot holes in crossed electric and magnetic fields. The results suggest that Ge is the superior material when considering only the factor of optical gain, but the possibility of lasing...

Hole spin dynamics and valence-band spin excitations in two-dimensional hole systems

In recent years, the spin dynamics and spin–orbit interaction in GaAs-based two-dimensional hole systems (2DHS) have created a lot of attention. This is due to the complex structure of the valence band, with its p-like character, which leads to strong spin–orbit coupling. In this paper, we review our recent studies on hole spin dynamics and valence-band spin excitations in GaAs-based, p-modulat...

Strong heavy-to-light hole intersubband absorption in the valence band of carbon-doped GaAs/AlAs superlattices

Modeling CMOS Tunneling Currents Through Ultrathin Gate Oxide Due to Conduction- and Valence-Band Electron and Hole Tunneling

A semi-empirical model is proposed to quantify the tunneling currents through ultrathin gate oxides (1–3.6 nm). As a multiplier to a simple analytical model [1], [2], a correction function is introduced to achieve universal applicability to all different combinations of bias polarities (inversion and accumulation), gate materials (N, P, Si, SiGe) and tunneling processes. Each coefficient of the...